收藏本站
SiR462DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
I D (A)
Q g (Typ.)
FEATURES
? Halogen-free According to IEC 61249-2-21
? TrenchFET ? Power MOSFET
30
0.0079 at V GS = 10 V
0.010 at V GS = 4.5 V
30 a
30 a
8.8 nC
? 100 % R g Tested
? 100 % UIS Tested
PowerPAK SO-8
APPLICATIONS
? High-Side Switch
? Server, VRM, POL
6.15 mm
1
S
S
5.15 mm
? DC/DC
D
2
3
S
G
4
D
8
7
D
D
G
6
5
D
Bottom View
Ordering Information: SiR462DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
30 a
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
L = 0.1 mH
T C = 25 °C
T A = 25 °C
I D
I DM
I AS
E AS
I S
30 a
18.9 b, c
15.1 b, c
70
31
48
30 a
4 b, c
A
mJ
A
T C = 25 °C
41.7
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
26.7
4.8 b, c
W
T A = 70 °C
3.1 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
R thJA
R thJC
21
2.4
26
3.0
°C/W
Notes:
a. Based on T C = 25 °C. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile ( http://www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
Document Number: 68823
S-82771-Rev. C, 17-Nov-08
www.vishay.com
1
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SIR464DP-T1-GE3 MOSFET N-CH 30V 50A PPAK 8SOIC
SIR468DP-T1-GE3 MOSFET N-CH 30V 40A PPAK 8SOIC
SIR470DP-T1-GE3 MOSFET N-CH 40V 60A PPAK 8SOIC
SIR472DP-T1-GE3 MOSFET N-CH 30V 20A PPAK 8SOIC
SIR474DP-T1-GE3 MOSFET N-CH D-S 30V PPAK 8SOIC
SIR494DP-T1-GE3 MOSFET N-CH D-S 12V PPAK 8SOIC
SIR67-21C/TR8 LED IR TOP FLAT WATER CLEAR SMD
SIR698DP-T1-GE3 MOSFET N-CHAN 100V(D-S)POWERPAK
相关代理商/技术参数
SIR462DP-T1-GE3 制造商:Vishay Siliconix 功能描述:N CHANNEL MOSFET 30V 30A SOIC 制造商:Vishay Siliconix 功能描述:N CHANNEL MOSFET, 30V, 30A, SOIC
SIR464DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SIR464DP-T1-GE3 功能描述:MOSFET 30V 50A 69W 3.1mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR466DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SIR466DP-T1-GE3 功能描述:MOSFET 30V 40A 54W 3.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR468DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SIR468DP-T1-GE3 功能描述:MOSFET 30V 40A 50W 5.7mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR470DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET